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MIG100J6CSB1W 2002-08-26 1 toshiba intelligent power module silicon n channel igbt MIG100J6CSB1W (600v/100a 6in1) high power switching applications motor control applications integrates inverter and control circuits (igbt drive units, and units for protection against short-circuit current, overcurrent, undervoltage and overtemperature) into a single package. the electrodes are isolated from case. low thermal resistance v ce (sat) = 1.9 v (typ.) ul recognized: file no. e87989 equivalent circuit 1. v d (u) 2. fo (u) 3. in (u) 4. gnd (u) 5. v d (v) 6. fo (v) 7. in (v) 8. gnd (v) 9. v d (w) 10. fo (w) 11. in (w) 12. gnd (w) 13. v d (l) 14. fo (l) 15. open 16. open 17. in (x) 18. in (y) 19. in (z) 20. gnd (l) 16 19 20 n p 18 17 14 13 15 4 3 2 1 8 7 6 5 12 11 10 9 gnd in fo v d v s out gnd gnd in fo v d v s out gnd gnd in fo v d v s out gnd gnd in fo v d v s out gnd gnd in fo v d v s out gnd gnd in fo v d v s out gnd u v w b
MIG100J6CSB1W 2002-08-26 2 package dimensions: toshiba 2-108g1d 1. v d (u) 2. fo (u) 3. in (u) 4. gnd (u) 5. v d (v) 6. fo (v) 7. in (v) 8. gnd (v) 9. v d (w) 10. fo (w) 11. in (w) 12. gnd (w) 13. v d (l) 14. fo (l) 15. open 16. open 17. in (x) 18. in (y) 19. in (z) 20. gnd (l)
MIG100J6CSB1W 2002-08-26 3 signal terminal layout 1. v d (u) 2. fo (u) 3. in (u) 4. gnd (u) 5. v d (v) 6. fo (v) 7. in (v) 8. gnd (v) 9. v d (w) 10. fo (w) 11. in (w) 12. gnd (w) 13. v d (l) 14. fo (l) 15. open 16. open 17. in (x) 18. in (y) 19. in (z) 20. gnd (l)
MIG100J6CSB1W 2002-08-26 4 maximum ratings (t j 25c) stage characteristics condition symbol ratings unit supply voltage p-n power terminal v cc 450 v collector-emitter voltage v ces 600 v collector current tc 25c, dc i c 100 a forward current tc 25c, dc i f 100 a collector power dissipation tc 25c, dc p c 590 w inverter junction temperature t j 150 c control supply voltage v d -gnd terminal v d 20 v input voltage in-gnd terminal v in 20 v fault output voltage fo-gnd terminal v fo 20 v control fault output current fo sink current i fo 14 ma operating temperature tc 20 to 100 c storage temperature range t stg 40 to 125 c isolation voltage ac 1 min v iso 2500 v screw torque (terminal) m4 2 n ? m module screw torque (mounting) m5 3 n ? m electrical characteristics 1. inverter stage characteristics symbol test condition min typ. max unit t j 25c 1 collector cut-off current i cex v ce 600 v t j 125c 10 ma t j 25c 1.6 1.9 2.3 collector-emitter saturation voltage v ce (sat) v d 15 v i c 100 a v in 15 v 0 v t j 125c 2.1 v forward voltage v f i f 100 a, t j 25c 2.1 2.5 v t on 1.3 2.2 t c (on) 0.3 t rr 0.2 t off 1.1 2.1 switching time t c (off) v cc 300 v, i c 100 a v d 15 v, v in 15 v 0 v t j 25c, inductive load (note 1) 0.2 s note 1: switching time test circuit and timing chart
MIG100J6CSB1W 2002-08-26 5 2. control stage (t j 25c) characteristics symbol test condition min typ. max unit high side i d (h) 13 17 control circuit current low side i d (l) v d 15 v 39 51 ma input on signal voltage v in (on) 1.4 1.6 1.8 v input off signal voltage v in (off) v d 15 v 2.2 2.5 2.8 v protection i fo (on) 10 12 fault output current normal i fo (off) v d 15 v 0.1 ma over current protection trip level inverter oc v d 15 v, t j 125c 160 a short circuit protection trip level inverter sc v d 15 v, t j 125c 160 a over current cut-off time t off (oc) v d 15 v 5 s trip level ot 110 118 125 over temperature protection reset level otr case temperature 98 c trip level uv 11.0 12.0 12.5 control supply under voltage protection reset level uvr 12.0 12.5 13.0 v fault output pulse width t fo v d 15 v 1 2 3 ms 3. thermal resistance (tc 25c) characteristics symbol test condition min typ. max unit inverter igbt 0.210 junction to case thermal resistance r th (j-c) inverter frd 0.313 c/w case to fin thermal resistance r th (c-f) compound is applied 0.017 c/w
MIG100J6CSB1W 2002-08-26 6 switching time test circuit timing chart 2.5 v 1.6 v 15 v 10% 10% t of f t c (o ff ) 10% 10% t o n t c (o n ) 90% i r r t r r 0 i r r 20% i r r input pulse v in waveform i c waveform v ce waveform 90% pg tlp559 intelligent power module v d in gnd out v s gnd u ( v, w ) p v cc v d in gnd out v s gnd i f 16 ma n 15 v 0.1 f 10 f 15 k
15 v 0.1 f 10 f 15 k

MIG100J6CSB1W 2002-08-26 7 4. recommended conditions for application characteristics symbol test condition min typ. max unit supply voltage v cc p-n power terminal 300 400 v control supply voltage v d v d -gnd signal terminal 13.5 15 16.5 v carrier frequency f c pwm control 20 khz dead time t dead switching time test circuit (see page.6) (note 2) 3 s note 2: the table lists dead time requirements for the module input, excluding photocoupler delays. when specifying dead time requirements for the photocoupler input, please add photocoupler delays to the dead time given above. dead time timing chart t dead 15 v v in waveform v in waveform 0 15 v 0 t dead
MIG100J6CSB1W 2002-08-26 8 forward current i f (a) switching time ( s) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector-emitter voltage v ce (v) i c ? v ce collector current i c (a) collector current i c (a) switching time ? i c switching time ( s) collector current i c (a) switching time ? i c forward voltage v f (v) i f ? v f forward current i f (a) t rr , i rr ? i f peak reverse recovery current i rr (a) peak reverse recovery time t rr ( 10 ns) 0 0 1 3 2 4 common cathode :t j 25c :t j 125c 50 200 100 150 10 0.01 0 20 120 0.1 1 t j 125c v cc 300 v v d 15 v l-load t on t of f t c ( on ) t c ( off ) 0.03 0.05 0.3 0.5 3 5 40 80 60 100 10 0.01 0 20 120 0.1 1 t j 25c v cc 300 v v d 15 v l-load t on t of f t c ( on ) t c ( off ) 0.03 0.05 0.3 0.5 3 5 40 80 60 100 200 0 0 1 3 4 50 2 v d 17 v common emitter t j 125c 13 v 15 v 100 150 200 0 0 1 3 4 50 2 v d 17 v common emitter t j 25c 13 v 15 v 100 150 100 1 0 20 60 120 3 30 80 common cathode :t j 25c :t j 125c i rr 10 t rr 40 100
MIG100J6CSB1W 2002-08-26 9 1 0.001 0.001 0.01 1 0.003 0.1 0.01 0.005 0.03 0.1 0.05 0.3 0.5 10 tc 25c diode transistor transient thermal resistance r th (t) (c / w) collector current i c (a) case temperature t c (c) oc ? t c over current protection trip level oc (a) carrier frequency f c (khz) i d (h) ? f c high side control circuit current i d (h) (ma) carrier frequency f c (khz) i d (l) ? f c low side control circuit current i d (l) (ma) collector-emitter voltage v ce (v) reverse bias soa pulse width tw (s) r th (t) ? tw inverter stage oc 180 0 0 200 600 160 140 80 20 400 t j 125c v d 15 v 100 60 100 300 700 500 40 120 30 0 0 5 15 25 15 20 10 25 10 5 20 v d 15 v t j 25c 300 0 0 25 75 150 150 250 50 100 125 100 v d 15 v inverter stage 50 200 100 0 0 5 15 25 60 80 10 40 20 20 v d 15 v t j 25c
MIG100J6CSB1W 2002-08-26 10 0.01 0 0.1 0.3 10 1 60 120 40 80 v cc 300 v v d 15 v l-load : t j 25c : t j 125c 20 100 0.03 0.05 0.5 3 5 0.01 0 0.1 0.3 10 1 60 120 40 80 v cc 300 v v d 15 v l-load : t j 25c : t j 125c 20 100 0.03 0.05 0.5 3 5 turn on loss ? i c turn off loss ? i c collector current i c (a) collector current i c (a) turn off loss eoff (mj) turn on loss eon (mj)
MIG100J6CSB1W 2002-08-26 11 toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation or others. the information contained herein is subject to change without notice. 000707ea a restrictions on product use

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